GESS_电子器件查询_www.Datasheet1.com

器件编号	器件名称	摘要	查看详细
GESS GESS [GE Solid State]
632172	2N2926	SILICON TRANSISTORS
632173	2N3228	5-A SILICON CONTROLLED RECTIFIERS
632174	2N3390	SILICON TRANSISTORS
632175	2N3390A	SILICON TRANSISTORS
632176	2N3525	5-A SILICON CONTROLLED RECTIFIERS
632177	2N3858	SILICON TRANSISTORS
632178	2N3858-60	SILICON TRANSISTORS
632179	2N3858A	SILICON TRANSISTORS
632180	2N3859A	SILICON TRANSISTORS
632181	2N3878	HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
632182	2N3879	HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
632183	2N4101	5-A SILICON CONTROLLED RECTIFIERS
632184	2N5038	HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
632185	2N5039	HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
632186	2N5202	HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
632187	2N5305	SILICON DARLINGTON TRANSISTORS
632188	2N5306	SILICON DARLINGTON TRANSISTORS
632189	2N5306A	SILICON DARLINGTON TRANSISTORS
632190	2N5365	SILICON TRANSISTORS
632191	2N5366	SILICON TRANSISTORS
632192	2N6032	HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
632193	2N6033	HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
632194	2N6496	HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
632195	2N6500	HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
632196	3N204	Silicon Dual Insulated-Gate Field-Effect Transistors
632197	3N205	Silicon Dual Insulated-Gate Field-Effect Transistors
632198	3N206	Silicon Dual Insulated-Gate Field-Effect Transistors
632199	BTA20	6-A Silicon Triacs For Power-Control and Power-Switching Applications
632200	BTA20C	6-A Silicon Triacs For Power-Control and Power-Switching Applications
632201	BTA20D	6-A Silicon Triacs For Power-Control and Power-Switching Applications

< 12 3 4 5 ...4 5 >

器件索引 [A] [B] [C] [D] [E] [F] [G] [H] [I] [J] [K] [L] [M] [N] [O] [P] [Q] [R] [S] [T] [U] [V] [W] [X] [Y] [Z]

http://www.datasheet1.com